advanced power p-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss -30v simple drive requirement r ds(on) 9m ? fast switching characteristic i d -48a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance junction-case 4 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice total power dissipation operating junction temperature range storage temperature range total power dissipation continuous drain current, v gs @ 10v -30 pulsed drain current 1 -200 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v AP6679BGI-HF rating halogen-free product -30 201203091 1 + 20 -48 -55 to 150 31.3 1.92 parameter -55 to 150 thermal data g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. the to-220cfm isolation package is widely preferred for all commercial-industrial through hole applications. g d s to-220cfm(i) free datasheet http:///
AP6679BGI-HF electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-30a - - 9 m ? v gs =-4.5v, i d =-20a - - 15 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-30a - 60 - s i dss drain-source leakage current v ds =-24v, v gs =0v - - -10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =-30a - 44 70 nc q gs gate-source charge v ds =-24v - 6.5 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 28.5 - nc t d(on) turn-on delay time v ds =-15v - 11 - ns t r rise time i d =-30a - 67 - ns t d(off) turn-off delay time r g =1 -37- ns t f fall time v gs =-10v - 22 - ns c iss input capacitance v gs =0v - 3500 5600 pf c oss output capacitance v ds =-25v - 520 - pf c rss reverse transfer capacitance f=1.0mhz - 495 - pf r g gate resistance f=1.0mhz - 2 4 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-30a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-10a, v gs =0 v , - 34 - ns q rr reverse recovery charge di/dt=100a/s - 30 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 free datasheet http:///
a p6679bgi-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 200 240 0481216 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0 v -6.0 v -5.0 v v g = - 4.0 v 0 40 80 120 160 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -7.0v -6.0v -5.0v v g = - 4.0 v t c = 150 o c 6 8 10 12 14 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -20 a t c =25 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -30a v g = -10v 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) 0 10 20 30 40 0 0.4 0.8 1.2 1.6 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c free datasheet http:///
AP6679BGI-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. maximum continuous drain fig 12. gate charge waveform current v.s. case temperature 4 q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 0 20406080 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds =-24v i d =-30a 0 1000 2000 3000 4000 5000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on) 0 10 20 30 40 50 60 25 50 75 100 125 150 t c , case temperature ( o c ) -i d , drain current (a) free datasheet http:///
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